Theoretical model and experimental analysis of chemical mechanical polishing with the effect of slurry for abrasive removal depth and surface morphology of silicon wafer

被引：34

作者：

Lin, Zone-Ching ^{[1
]}

Wang, Ren-Yuan ^{[2
]}

Ma, Shih-Hung ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Sect 4, Dept Mech Engn, 43 Keelung Rd, Taipei 10672, Taiwan

[2] Army Acad ROC, Dept Mech Engn, 750 Longdong Rd, Zhongli City 32093, Taoyuan County, Taiwan

来源：

TRIBOLOGY INTERNATIONAL | 2018年 / 117卷

关键词：

Chemical mechanical polishing; Silicon wafer; Surface morphology; Chemical reaction of slurry; SAPPHIRE WAFER; CONTACT; WEAR; PLANARIZATION; DEFORMATION; SUBSTRATE;

D O I：

10.1016/j.triboint.2017.08.021

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

This study considers the effect of the chemical reaction of slurry for chemical mechanical polishing and combines an analytical model of polishing times and the theory of specific downward force energy to construct a theoretical model to calculate abrasive removal depth of a silicon wafer that is polished by a cross-groove pattern polishing pad. Specific down force energy is used to calculate the thickness of the chemical reaction layer of the silicon wafer. A comparison of the average abrasive removal depths and the surface morphology of silicon wafer that uses simulation and experiment shows that the simulation results for the average abrasive removal depths and the surface morphology of silicon wafer are acceptable.

引用

页码：119 / 130

页数：12

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