Structures Based on Porous Silicon and Graphene

被引：0

作者：

Gosteva, Ekaterina ^{[1
]}

Starkov, Vitaly ^{[2
]}

Daria, Sedlovets ^{[2
]}

Belorus, Anton ^{[3
]}

机构：

[1] MISIS Natl Univ Sci & Technol, Dept Mat Sci Semicond & Dielect, Moscow, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka, Russia

[3] St Petersburg Electrochem Univ LETI, Micro & Nanoelect, St Petersburg, Russia

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (IEEE 3M-NANO) | 2019年

关键词：

GPSi-var; porous silicon; anodic etching; membranes; the sharp pressure changes (SPC) mode; nanoscale; FILMS;

D O I：

10.1109/3m-nano46308.2019.8947417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The article discusses the features of the morphology of deep porous silicon layers with variable pore structure, as well as the features of the formation of graphene layers within the pores. The results of the influence of graphene on the characteristics of composite layers are presented.

引用

页码：94 / 97

页数：4

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