Sn-Ag solder bump formation for flip-chip bonding by electroplating

被引：39

作者：

Arai, S ^{[1
]}

Akatsuka, H ^{[1
]}

Kaneko, N ^{[1
]}

机构：

[1] Shinshu Univ, Fac Engn, Dept Chem & Mat Engn, Nagano 3808553, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2003年 / 150卷 / 10期

关键词：

D O I：

10.1149/1.1606687

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Pb-free Sn-Ag alloy solder bumps for flip-chip bonding were formed by electroplating with the aid of a photolithography. Pyrophosphate-iodide baths were used for the plating bath. Smooth, fine-grained Sn-Ag alloy films were obtained using a bath containing both polyethylene glycol (mean molecular weight 600, PEG600) and formaldehyde (HCHO) additives. Sn-Ag alloy films with near eutectic compositions (Sn-3.8 atom % Ag) were obtained under both galvanostatic and potentiostatic conditions. All of the Sn-Ag alloy films deposited consisted of beta-Sn phase and epsilon(Ag(3)Sn) phase. Straight-walled bumps and mushroom bumps were formed under both galvanostatic and potentiostatic conditions from the pyrophosphate-iodide bath containing both PEG600 and HCHO. Mushroom bumps with smooth surfaces and homogeneous composition were obtained under potentiostatic conditions. (C) 2003 The Electrochemical Society.

引用

页码：C730 / C734

页数：5

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