Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper

被引：47

作者：

Zhao, Larry ^{[1
,2
]}

Tokei, Zsolt ^{[1
]}

Croes, Kristof ^{[1
]}

Wilson, Christopher J. ^{[1
]}

Baklanov, Mikhail ^{[1
]}

Beyer, Gerald P. ^{[1
]}

Claeys, Cor ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3000 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

MODEL;

D O I：

10.1063/1.3543850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time dependent dielectric breakdown (TDDB) lifetime model study has been performed on a metal-insulator-semiconductor capacitor structure with copper directly deposited on silicon dioxide without a barrier material. The structure generates a low electric field acceleration of time-to-failure, which makes it possible to measure TDDB over a wide range of electric fields from 3.5 to 10 MV/cm and experimentally validate TDDB lifetime model without any assumption and data extrapolation. The experimental results are in good agreement with the so called 1/E model and do not support the E, root E, or power-law model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3543850]

引用

页数：3

共 16 条

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