Insight on a novel layered semiconductors: CuTlS and CuTlSe

被引：11

作者：

Aliev, Ziya S. ^{[1
,2
,3
]}

Zuniga, Fco Javier ^{[4
]}

Koroteev, Yury M. ^{[5
,6
]}

Breczewski, Tomasz ^{[4
]}

Babanly, Nizamaddin B. ^{[1
]}

Amiraslanov, Imamaddin R. ^{[2
]}

Politano, Antonio ^{[7
]}

Madariaga, Gotzon ^{[4
]}

Babanly, Mahammad B. ^{[1
]}

Chulkov, Evgueni V. ^{[3
,6
,8
,9
,10
]}

机构：

[1] ANAS, Inst Catalysis & Inorgan Chem, H Javid Ave 113, AZ-1143 Baku, Azerbaijan

[2] ANAS, Inst Phys, H Javid Ave 131, AZ-1143 Baku, Azerbaijan

[3] DIPC, San Sebastian 20080, Spain

[4] Univ Basque Country, Fac Ciencia & Tecnol, Dept Fis Mat Condensada, Apdo 644, E-48080 Bilbao, Spain

[5] Russian Acad Sci, Inst Strength Phys & Mat Sci, Siberian Branch, Tomsk 634055, Russia

[6] Tomsk State Univ, Tomsk 634050, Russia

[7] Univ Calabria, Dept Phys, I-87036 Arcavacata Di Rende, CS, Italy

[8] Univ Basque Country, Fac Ciencias Quim, Dept Fis Mat, Apdo 1072, San Sebastian 20080, Spain

[9] Ctr Mixto CSIC UPV EHU, CFM, MPC, San Sebastian 20080, Spain

[10] St Petersburg State Univ, St Petersburg 198504, Russia

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2016年 / 242卷

关键词：

Layered semiconductors; Crystal growth; Crystal structure; Band structure; Copper thallium chalcogenides; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; PHASE-EQUILIBRIA; SYSTEM; VALENCE;

D O I：

10.1016/j.jssc.2016.05.036

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Single crystals of the ternary copper compounds CuTlS and CuTlSe have been successfully grown from stoichiometric melt by using vertical Bridgman-Stockbarger method. The crystal structure of the both compounds has been determined by powder and single crystal X-Ray diffraction. They crystallize in the PbFCl structure type with two formula units in the tetragonal system, space group P4/nmm, a=3.922(2); c= 8.123(6); Z=2 and a=4.087(6); c=8.195(19) angstrom; Z=2, respectively. The band structure of the reported compounds has been analyzed by means of full-potential linearized augmented plane-wave (FLAPW) method based on the density functional theory (OFT). Both compounds have similar band structures and are narrow-gap semiconductors with indirect band gap. The resistivity measurements agree with a semiconductor behavior although anomalies are observed at low temperature. (C) 2016 Elsevier Inc. All rights reserved.

引用

页码：1 / 7

页数：7

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