Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

被引：3

作者：

Sobolev, N. A. ^{[1
]}

Kalyadin, A. E. ^{[1
]}

Shek, E. I. ^{[1
]}

Shtel'makh, K. F. ^{[1
,2
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2017年 / 51卷 / 09期

关键词：

EVOLUTION;

D O I：

10.1134/S1063782617090202

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Influence of the measurement temperature in the range 5-130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 x 10(14) cm(-2) and annealed at a temperature of 700A degrees C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.

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页码：1133 / 1135

页数：3

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