Analytical model of the DC actuation of electrostatic MEMS devices with distributed dielectric charging and nonplanar electrodes

被引:122
作者
Rottenberg, Xavier [1 ]
De Wolf, Ingrid
Nauwelaers, Bart K. J. C.
De Raedt, Walter
Tilmans, Harrie A. C.
机构
[1] Interuniv Microelect Ctr, Div Microsyst Components & Packaging MCP, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Telecommun & Microwaves, B-3001 Louvain, Belgium
[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium
关键词
dielectric materials; electrostatic devices; microelectromechanical; devices; reliability;
D O I
10.1109/JMEMS.2007.899334
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper gives a new insight into the problem of the irreversible stiction of RF microelectromechanical systems (MEMS) attributed to the dielectric charging. We present a model for the electrostatic actuation of MEMS devices taking into account the nonuniform distributions of the air gap and the charges in the dielectric layer. The major result of our study is the impossibility to invoke the sole uniform dielectric charging phenomenon to explain the irreversible stiction of electrostatic MEMS devices. In the absence of other forces, a nonzero variance of the charge distribution is required to explain the stiction of the device. Considering only uniform residual charge densities, previous reported works could only account for a drift of the actuation characteristics as a whole. In case of a uniform air-gap distribution, our analytical model can already account for an increase of the up-capacitance, a shift of the C-V, its narrowing, and the stiction by a closure of the pull-out window. We further show that the combined nonuniformities of air gaps and charges break the symmetry of the actuation characteristics. The asymmetry can be such that one of the pull-in points disappears, which is replaced by a continuous tuning range while the other pull-in point still exists.
引用
收藏
页码:1243 / 1253
页数:11
相关论文
共 24 条
[1]  
Chan E. K., 1998, 1998 International Conference on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators, P180
[2]   Characterization of contact electromechanics through capacitance-voltage measurements and simulations [J].
Chan, EK ;
Garikipati, K ;
Dutton, RW .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1999, 8 (02) :208-217
[3]  
CZARNECKI P, 2005, P MEMSWAVE, P133
[4]   Techniques for reliability analysis of MEMS RF switch [J].
DeNatale, J ;
Mihailovich, R ;
Waldrop, J .
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, :116-117
[5]   Plasma processing damage in etching and deposition [J].
Fonash, SJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (1-2) :103-107
[6]  
Goldsmith C, 2001, IEEE MTT-S, P227, DOI 10.1109/MWSYM.2001.966876
[7]   Non-charge related mechanism affecting capacitive MEMS switch lifetime [J].
Kucko, JF ;
Petrosky, JC ;
Reid, JR ;
Yeo, YK .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (03) :140-142
[8]  
Lisec T., 2004, P 12 GAAS S AMST NET, P471
[9]   Radiation effects in micro-electromechanical systems (MEMS): RF relays [J].
McClure, SS ;
Edmonds, LD ;
Mihailovich, R ;
Johnston, AH ;
Alonzo, P ;
DeNatale, J ;
Lehman, J ;
Yui, C .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :3197-3202
[10]   Failure predictive model of capacitive RF-MEMS [J].
Mellé, S ;
De Conto, D ;
Mazenq, L ;
Dubuc, D ;
Poussard, B ;
Bordas, C ;
Grenier, K ;
Bary, L ;
Vendier, O ;
Muraro, JL ;
Cazaux, JL ;
Plana, R .
MICROELECTRONICS RELIABILITY, 2005, 45 (9-11) :1770-1775