Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

被引：55

作者：

Altuntas, Philippe ^{[1
]}

Lecourt, Francois ^{[1
]}

Cutivet, Adrien ^{[1
]}

Defrance, Nicolas ^{[1
]}

Okada, Etienne ^{[1
]}

Lesecq, Marie ^{[1
]}

Rennesson, Stephanie ^{[2
]}

Agboton, Alain ^{[1
]}

Cordier, Yvon ^{[2
]}

Hoel, Virginie ^{[1
]}

De Jaeger, Jean-Claude ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, Microwave Power Devices Grp, F-59652 Villeneuve Dascq, France

[2] Ctr Natl Rech Sci, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期

关键词：

AlGaN/GaN; high electron mobility transistor (HEMT); Ka-band; millimeter-wave power density;

D O I：

10.1109/LED.2015.2404358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25 V, continuous-wave output power density of 2.7 W.mm(-1) is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain (G(p)) of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency F-T of 116 GHz and a maximum oscillation frequency F-MAX of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.

引用

页码：303 / 305

页数：3

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