Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems

被引:64
作者
Harsányi, G [1 ]
Inzelt, G
机构
[1] Budapest Univ Technol & Econ, Dept Elect Technol, H-1521 Budapest, Hungary
[2] Eotvos Lorand Univ, Dept Phys Chem, H-1518 Budapest, Hungary
基金
匈牙利科学研究基金会;
关键词
D O I
10.1016/S0026-2714(00)00093-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Various metallization types are applied in advanced high-density interconnection systems, pure metals as well as alloys, showing very different abilities for forming migration short circuit failures. There are two conventionally applied empirical possibilities for getting information or comparison about the migration behaviour of a conductor system, the water drop test, and the accelerated climatic tests, such as thermal humidity bias tests and the highly accelerated stress test. The results are generally uncertain showing large spreading and can only be interpreted with difficulties. A third method has also been developed and is presented in the paper for testing metallization systems based on a powerful technique, this is the very well-known cyclic voltammetry (CV) used in electroanalytical chemistry. The results indicate an effective method for making quick comparison between metallization systems in connection with their migration abilities. Moreover, the CV method enables a better understanding of the electrochemical processes that are the bases of the electrochemical migration. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:229 / 237
页数:9
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