Influence of TiO2 Buffer on Structure and Optical Properties of ZnO Film on Si(100) Substrate

被引：2
作者：
Zhang, Weiying [1 ,2 ]
Zhao, Jianguo [1 ]
Liu, Zhenzhong [1 ]
Liu, Zhaojun [1 ]
Fu, Zhuxi [2 ]
机构：
[1] Luoyang Normal Coll, Coll Phys & Elect Informat, Henan Luoyang 471022, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
来源：
MATERIALS TRANSACTIONS | 2010年 / 51卷 / 06期
基金：
中国国家自然科学基金;
关键词：
ZnO; thin film; TiO2; buffer; THIN-FILMS; GROWTH; LAYER;
D O I：
10.2320/matertrans.M2009433
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO films were prepared on p-Si (100) substrate., by direct cui rent (DC) sputtering with and without TiO2 buffer The crystal structures. surface morphologies and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) XRD results indicated that the growth mode of ZnO film was changed from strong (002) preferential orientation to several crystal orientations by introducing TiO2 baler. and the residual strain was reduced SEM manifested that ZnO film with TiO2 buffer had the uniform grain size and flat surface In addition, stronger ultraviolet emission was observed from ZnO film with TiO2 than that without at room temperature The low temperature photoluminescence was investigated to understand the different PL mechanism of ZnO films [doi 10.2320/matertrans.M2009433]
引用
收藏
页码：1064 / 1066
页数：3
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