Recrystallization of ion-beam amorphized BSCC thin films

被引：1
|
作者：
Hishita, S
Haneda, H
Kim, SS
Moon, JH
机构：
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Puk Gu, Kwangju 500757, South Korea
[3] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540742, South Korea
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
Bi-2212; superconductor; thin film; recrystallization; ion irradiation; amorphization;
D O I：
10.1016/S0168-583X(03)00715-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effects of oxygen ion irradiation and subsequent thermal annealing of Bi2Sr2Ca1Cu2Ox (Bi-2212) films deposited on MgO(001) by using pulsed laser deposition were studied. It was found that compared with the heated-only film, the ion irradiated and thermally annealed one showed an improved conducting behavior in the Bi-2212 phase. Our results suggest that amorphization by oxygen ion bombardment and recrystallization by thermal annealing might be a suitable process for the preparation of high-quality superconducting Bi-2212 films. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：171 / 174
页数：4
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