Performance Tradeoffs of Integrated CMOS Charge Amplifiers

被引：1

作者：

Lopez-Martin, Antonio J. ^{[1
]}

Massarotto, Marco ^{[1
]}

Carlosena, Alfonso ^{[1
]}

机构：

[1] Univ Publ Navarra, Dept Elect & Elect Engn, Pamplona, Spain

来源：

2009 IEEE SENSORS, VOLS 1-3 | 2009年

关键词：

D O I：

10.1109/ICSENS.2009.5398412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed comparison of integrated CMOS charge amplifiers is presented in This work. Conventional topologies, along with new ones, have been fabricated in a CMOS test chip prototype and their measured performance compared in terms of sensitivity, PSRR, and frequency response. As a result of this work, a complete library of fabricated CMOS charge amplifiers is presented and the performance tradeoffs of each solution discussed. This way the designer can make an educated choice about the design that best suits some given specs.

引用

页码：1345 / 1348

页数：4

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