Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

被引：11

作者：

Kwiecinski, Wojciech ^{[1
,2
]}

Sotthewes, Kai ^{[1
]}

Poelsema, Bene ^{[1
]}

Zandvliet, Harold J. W. ^{[1
]}

Bampoulis, Pantelis ^{[1
,3
,4
]}

机构：

[1] Univ Twente, Phys Interfaces & Nanomat, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

[2] Lodz Univ Technol, Fac Chem, Zeromskiego 116, PL-90924 Lodz, Poland

[3] Univ Twente, Phys Fluids, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, JM Burgers Ctr Fluid Mech, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

来源：

JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2017年 / 505卷

关键词：

MoS2; Graphene; 2D materials; Chemical vapor deposition; Heterostructures; SCANNING-TUNNELING-MICROSCOPY; SPECTROSCOPY; EDGE; HETEROSTRUCTURES; NUCLEATION; LAYERS; SITES;

D O I：

10.1016/j.jcis.2017.06.076

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 degrees C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74 nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications. (C) 2017 Elsevier Inc. All rights reserved.

引用

页码：776 / 782

页数：7

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