Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

被引：24

作者：

Kanomata, K. ^{[1
,2
]}

Tokoro, K. ^{[1
]}

Imai, T. ^{[1
]}

Pansila, P. ^{[1
]}

Miura, M. ^{[1
]}

Ahmmad, B. ^{[1
]}

Kubota, S. ^{[1
]}

Hirahara, K. ^{[1
]}

Hirose, F. ^{[1
]}

机构：

[1] Yamagata Univ, Grad Sch Sci & Engn, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan

[2] Japan Soc Promot Sci, Chiyoda Ku, 5-3-1 Kojimachi, Tokyo 1020083, Japan

来源：

APPLIED SURFACE SCIENCE | 2016年 / 387卷

关键词：

ALD; TEMAZ; Plasma-excited humidified argon; MIR-IRAS; THIN-FILMS; GROWTH-KINETICS; OZONE; TRIS(DIMETHYLAMINO)SILANE; SI(100); SIO2; CHEMISTRY; HFO2; ALD;

D O I：

10.1016/j.apsusc.2016.06.122

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Room-temperature atomic layer deposition (ALD) of ZrO2 is developed with tetrakis(ethylmethylamino)zirconium (TEMAZ) and a plasma-excited humidified argon. A growth per cycle of 0.17 nm/cycle at room temperature is confirmed, and the TEMAZ adsorption and its oxidization on ZrO2 are characterized by IR absorption spectroscopy with a multiple internal reflection mode. TEMAZ is saturated on a ZrO2 surface with exposures exceeding similar to 2.0 x 10(5) Langmuir (1 Langmuir =1.0 x 10(-6) Torr s) at room temperature, and the plasma-excited humidified argon is effective in oxidizing the TEMAZ-adsorbed ZrO2 surface. The IR absorption spectroscopy suggests that Zr-OH works as an adsorption site for TEMAZ. The reaction mechanism of room-temperature ZrO2 ALD is discussed in this paper. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：497 / 502

页数：6

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