High-power continuous-wave midinfrared type-II "W" diode lasers

被引:40
作者
Canedy, CL [1 ]
Bewley, WW [1 ]
Lindle, JR [1 ]
Vurgaftman, I [1 ]
Kim, CS [1 ]
Kim, M [1 ]
Meyer, JR [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1063/1.1938256
中图分类号
O59 [应用物理学];
学科分类号
摘要
A type-II "W" diode laser with five quantum well periods and emitting at lambda approximate to 3.5 mu m operated in cw mode to T=218 K. A second device produced more than 500 mW of cw power at 80 K. The threshold current density at T=78 K was 31 A/cm(2), and pulsed operation was observed to 317 K. Improvements over previous single-stage devices for this wavelength range may be attributed in part to high growth quality and also to the incorporation of transition regions that smooth discontinuities in the conduction-band profile.
引用
收藏
页码:1 / 3
页数:3
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共 22 条
  • [1] Continuous wave operation of a mid-infrared semiconductor laser at room temperature
    Beck, M
    Hofstetter, D
    Aellen, T
    Faist, J
    Oesterle, U
    Ilegems, M
    Gini, E
    Melchior, H
    [J]. SCIENCE, 2002, 295 (5553) : 301 - 305
  • [2] High-temperature continuous-wave 3-6.1 μm "W'' lasers with diamond-pressure-bond heat sinking
    Bewley, WW
    Felix, CL
    Vurgaftman, I
    Stokes, DW
    Aifer, EH
    Olafsen, LJ
    Meyer, JR
    Yang, MJ
    Shanabrook, BV
    Lee, H
    Martinelli, RU
    Sugg, AR
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1075 - 1077
  • [3] Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K
    Bewley, WW
    Lee, H
    Vurgaftman, I
    Menna, RJ
    Felix, CL
    Martinelli, RU
    Stokes, DW
    Garbuzov, DZ
    Meyer, JR
    Maiorov, M
    Connolly, JC
    Sugg, AR
    Olsen, GH
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 256 - 258
  • [4] Room-temperature "W" diode lasers emitting at λ≈4.0 μm
    Bewley, WW
    Vurgaftman, I
    Kim, CS
    Kim, M
    Canedy, CL
    Meyer, JR
    Bruno, JD
    Towner, FJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5544 - 5546
  • [5] BEWLEY WW, IN PRESS IEEE J QUAN
  • [6] Recent progress in the development of type II interband cascade lasers
    Bradshaw, JL
    Breznay, NP
    Bruno, JD
    Gomes, JM
    Pham, JT
    Towner, FJ
    Wortman, DE
    Tober, RL
    Monroy, CJ
    Olver, KA
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) : 479 - 485
  • [7] Enhanced CW performance of the interband cascade laser using improved device fabrication
    Bradshaw, JL
    Pham, JT
    Yang, RQ
    Bruno, JD
    Wortman, DE
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) : 102 - 105
  • [8] Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II "W" structures
    Canedy, CL
    Boishin, GI
    Bewley, WW
    Kim, CS
    Vurgaftman, I
    Kim, M
    Lindle, JR
    Meyer, JR
    Whitman, LJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1575 - 1579
  • [9] Dependence of type II "W" mid-infrared photoluminescence and lasing properties on growth conditions
    Canedy, CL
    Bewley, WW
    Kim, CS
    Kim, M
    Vurgaftman, I
    Meyer, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1347 - 1355
  • [10] High CW power (>200mW/facet) at 3.4 mu m from InAsSb/InAlAsSb strained quantum well diode lasers
    Choi, HK
    Turner, GW
    Manfra, MJ
    [J]. ELECTRONICS LETTERS, 1996, 32 (14) : 1296 - 1297