Characterization of a selective AlN wet etchant

被引：18

作者：

Greenlee, Jordan D. ^{[1
]}

Anderson, Travis J. ^{[2
]}

Feigelson, Boris N. ^{[2
]}

Koehler, Andrew D. ^{[2
]}

Hobart, Karl D. ^{[2
]}

Kub, Francis J. ^{[2
]}

机构：

[1] US Naval Res Lab, Natl Res Council, Washington, DC 20375 USA

[2] Naval Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 03期

关键词：

GAN; ACTIVATION;

D O I：

10.7567/APEX.8.036501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of a selective AlN wet etchant, AZ400K, on the morphology and chemical composition of capped and uncapped GaN surfaces were investigated. After etching an uncapped GaN thin film at 80 degrees C for 8 h, the surface morphology was unchanged. After an annealing pulse of 1500 degrees C was applied, AlN-encapsulated GaN surfaces exhibited morphology change due to surface rearrangement. No reaction occurred between the GaN and AlN, preventing the complete removal of AlN. AZ400K was found to completely etch AlN without damaging the underlying GaN film, thus enabling plasma-free processing of power and optoelectronic devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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