Memory analysis for memristors and memristive recurrent neural networks

被引:38
作者
Bao, Gang [1 ,2 ]
Zhang, Yide [3 ]
Zeng, Zhigang [4 ,5 ]
机构
[1] China Three Gorges Univ, Hubei Key Lab Cascaded Hydropower Stn Operat & Co, Elect Engn & New Energy, Yichang 443002, Peoples R China
[2] Hubei Univ, Hubei Key Lab Appl Math, Wuhan 430074, Peoples R China
[3] CALTECH, Andrew & Peggy Cherng Dept Med Engn, Pasadena, CA 91125 USA
[4] Huazhong Univ Sci & Technol, Sch Artificial Intelligence & Automat, Wuhan 430074, Peoples R China
[5] Minist China, Key Lab Image Proc & Intelligent Control Educ, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Dopant drift; memory; memristive neural networks; memristor; STABILITY ANALYSIS;
D O I
10.1109/JAS.2019.1911828
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Traditional recurrent neural networks are composed of capacitors, inductors, resistors, and operational amplifiers. Memristive neural networks are constructed by replacing resistors with memristors. This paper focuses on the memory analysis, i.e., the initial value computation, of memristors. Firstly, we present the memory analysis for a single memristor based on memristors' mathematical models with linear and nonlinear drift. Secondly, we present the memory analysis for two memristors in series and parallel. Thirdly, we point out the difference between traditional neural networks and those that are memristive. Based on the current and voltage relationship of memristors, we use mathematical analysis and SPICE simulations to demonstrate the validity of our methods.
引用
收藏
页码:96 / 105
页数:10
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