Optical properties of amorphous HF-In-Zn-O thin films estimated from transmission spectra

被引:12
作者
Shin, Flyun Joon [1 ,2 ]
Kang, Se-Jun [2 ]
Baik, Jae Yoon [2 ]
Lee, Ik-Jae [2 ]
Singh, Palwinder [2 ,3 ]
Thakur, Anup [3 ]
机构
[1] POSTECH, Dept Phys, Pohang, South Korea
[2] POSTECH, Pohang Accelerator Lab, Pohang, South Korea
[3] Punjabi Univ, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India
基金
新加坡国家研究基金会;
关键词
Amorphous materials; Plasma deposition; Optical properties; PERFORMANCE; CONSTANTS; SEMICONDUCTORS; TEMPERATURE; TRANSISTOR; THICKNESS; BEHAVIOR; CHANNEL;
D O I
10.1016/j.jpcs.2014.12.010
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Amorphous and flat (< 1 nm roughness) Hf-In-Zn-O thin films were prepared by radio frequency (rf) magnetron sputtering method at room temperature (RT) and at 300 degrees C substrate temperature. The crystal structure and surface morphology were investigated by high resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM), respectively. Optical properties of these films were obtained from the UV-VIS-NIR transmission spectra, at normal incidence, over the 200-2000 nm spectral range. Swanepoel's method was used to calculate the thickness and the refractive index of the films. The dispersion of refractive index was obtained in terms of the single-oscillator Wemple-DiDomenico model. The optical absorption edge was described using the direct transition model proposed by Tauc. The film deposited at higher substrate temperature had lower optical band gap, higher refractive index, higher oscillator strength and energy of the effective dispersion oscillator. Optical characterization shows that films become more stable, relaxed and rigid at higher substrate temperature. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:7 / 10
页数:4
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