Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method

被引：37

作者：

Chen, Chun-Hung ^{[1
]}

Chen, Jyh-Chen ^{[1
]}

Lu, Chung-Wei ^{[2
]}

Liu, Che-Ming ^{[3
]}

机构：

[1] Natl Cent Univ, Dept Mech Engn, Jhongli 32001, Taoyuan County, Taiwan

[2] Jen Teh Jr Coll, Dept Informat Management, Hou Lung 35664, Miao Li, Taiwan

[3] Sino Amer Silicon Prod Inc, Innovat Technol Res Ctr, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Computer simulation; Heat transfer; Convection; Single crystal growth; Sapphire; EXCHANGER-METHOD; TRANSPORT; MELT;

D O I：

10.1016/j.jcrysgro.2010.10.121

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Numerical computation has been performed to investigate temperature and velocity distributions for different stages of the Kyropoulos sapphire single crystal-growth process. The finite-element method is employed to solve the governing equations with proper boundary conditions. In the power history considered here, a vortex appears in the melt during growth, and its strength decreases as the input power is reduced. Isotherms in the melt are distorted by flow motion. The crystal-melt interface is always convex towards the melt and in early stages the convexity increases as the input power decreases. When the crystal-melt interface is close to the bottom of the crucible, this interface is flat near the apex because of reduction in growth rate near the upper region caused by input heat from the bottom of the crucible. Therefore, convexity of the crystal-melt interface decreases the input power decreases. The crystal shape predicted by the present simulation is similar to that of crystals grown in the industry. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：162 / 167

页数：6

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