Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor

被引：13

作者：

Ruzgar, Serif ^{[1
]}

Caglar, Mujdat ^{[2
]}

机构：

[1] Batman Univ, Dept Phys, Fac Art & Sci, Batman, Turkey

[2] Anadolu Univ, Dept Phys, Fac Sci, TR-26470 Eskisehir, Turkey

来源：

SYNTHETIC METALS | 2017年 / 232卷

关键词：

Pentacene; OFET; Bilayer gate insulator; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; ORGANIC TRANSISTORS; VOLTAGE; OXIDE; HYSTERESIS; LAYER; STABILITY; GROWTH;

D O I：

10.1016/j.synthmet.2017.07.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, bottom-gate top-contact pentacene-based organic field effect transistors (OFET) with various spin coated ultrathin organic dielectrics on anodized aluminum oxide (Al2O3) bilayer gate dielectrics were fabricated. We have investigated the influence of the bilayer gate insulator having different combinations on the OFETs performance. Polystyrene (PS), poly-4-methylstyrene (P4MS), Poly-4-vinylphenol (PVP), poly-methylmethacrylate (PMMA) and Poly(4-vinylphenol-co-methyl methacrylate) (PVP_co_PMMA) were used as an organic dielectric. The results indicate that Al2O3 gate dielectric with Poly (4-vinylphenol) shows the optimum electrical performance with carrier mobility as large as 0.65 cm(2)/Vs, on/off current ratio of 10(6), and threshold voltage as -3.8 V.

引用

页码：46 / 51

页数：6

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