Co-electrodeposition of NiCu(OH)2@Ni-Cu-Se hierarchical nanoparticle structure for supercapacitor application with enhanced performance

被引:64
作者
Chebrolu, Venkata Thulasivarma [1 ]
Balakrishnan, Balamuralitharan [2 ]
Raman, Vivekanandan [3 ]
Cho, Inho [1 ]
Bak, Jin-Soo [1 ]
Prabakar, Kandasamy [1 ]
Kim, Hee-Je [1 ]
机构
[1] Pusan Natl Univ, Dept Elect Engn, Busan 46241, South Korea
[2] Korea Univ, Green Sch, R&D Ctr, Seoul 02842, South Korea
[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, IMDL, Suwon 16419, Gyeonggi Do, South Korea
关键词
Double layered hydroxide; Vertical growth; Nickel-copper selenide; Electrodeposition; Supercapacitor; 3-DIMENSIONAL COPPER FOAM; ALL-SOLID-STATE; HYDROXIDE NANOSHEETS; FACILE SYNTHESIS; NANOWIRE ARRAYS; HIGH-ENERGY; NICKEL; OXIDE; NANOCOMPOSITES; FABRICATION;
D O I
10.1016/j.apsusc.2019.145015
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Currently, a hierarchical nanostructure with a new atom inserting into active material has paid more attention to the supercapacitor application. Here, we present a vertical growth of NiCu(OH)(2) wrapped Ni-Cu-Se co-axial nanoparticle structure via the co-electrodeposition technique. The deposition of NiCu(OH)(2) on top of Ni-Cu-Se can exhibit excellent electrochemical performance. As a result, the NiCu(OH)(2)@Ni-Cu-Se offers a high specific capacitance 264.91 F g(-1 )and capacity of (158.95 mAh g(-1)) at a current density of 1 A g(-1), which is significantly higher than that of Ni-Cu-O and Ni-Cu-Se. Moreover, the electrode delivers good long-term cycling stability of 3000 cycles (the capacitance decreased to 24.2% of its initial capacitance value). The improved performance mainly attributed to the synergetic effect of NiCu(OH)(2)@Ni-Cu-Se, and its unique hierarchical nanostructure plays a vital role in providing rich redox reactions, high conductivity, efficient charge transport and short ion diffusion. This study opens a new platform for layered bimetallic hydroxide into selenium as promising active electrode material for energy storage devices.
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页数:9
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