Effect of H2 ambient annealing on silicon nanowires prepared by atmospheric pressure chemical vapor deposition

被引：15
|
作者：
Swain, Bhabani S. [2 ]
Lee, Sung S. [2 ]
Lee, Sang H. [2 ]
Swain, Bibhu P. [1 ]
Hwang, Nong M. [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki, Japan
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Natl Res Lab Charged Nanoparticles, Seoul, South Korea
来源：
CHEMICAL PHYSICS LETTERS | 2010年 / 494卷 / 4-6期
关键词：
The financial support from BK21 program; Republic of Korea is acknowledged. The Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program funded by the Ministry of Science and Technology (No. M10600000159-06J0000-15910 ) also supported this work;
D O I：
10.1016/j.cplett.2010.06.028
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the effect of H-2 ambient annealing on the microstructure and vibrational properties of silicon nanowires (SiNWs) grown by atmospheric pressure chemical vapor depositions. The SiNWs were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Field- Emission Scanning Electron Microscopy (FESEM) and High- Resolution Transmission Electron Microscopy (HRTEM). The HRTEM study revealed that the thickness of oxide sheath surrounded by core silicon decreased with increasing H-2 ambient annealing and consequently the vibrational spectra were changed. In FTIR spectra, the transverse optic and longitudinal optic peak positions of Si-O symmetry and asymmetry showed a blue shift of the outer oxide of SiNWs. The Si-O-Si peak position remained unchanged at 1080 cm (1) while the integrated absorption of Si-O-Si vibration band decreased with increasing H-2 flow rate. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：269 / 273
页数：5
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