MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

被引：29

作者：

Blanchard, Paul T. ^{[1
]}

Bertness, Kris A. ^{[1
]}

Harvey, Todd E. ^{[1
]}

Sanders, Aric W. ^{[1
]}

Sanford, Norman A. ^{[1
]}

George, Steven M. ^{[2
,3
]}

Seghete, Dragos ^{[2
,3
]}

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA

[2] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Chem Engn, Boulder, CO 80309 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 03期

关键词：

Atomic layer deposition (ALD); conformal gate; gallium nitride; MOSFETs; nanowires; ATOMIC LAYER DEPOSITION; ELECTRICAL CHARACTERIZATION; NUCLEATION; GROWTH;

D O I：

10.1109/TNANO.2011.2177993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reversebias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12V. Maximum transcon-ductances exceeded 10 mu S, and ON/OFF current ratios higher than 10(8) were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.

引用

页码：479 / 482

页数：4

共 24 条

[1] Impact of TiN plasma post-treatment on alumina electron trapping [J].