MOCVD of the cubic zinc nitride phase, Zn3N2,Using Zn[N(SiMe3)2]2 and ammonia as precursors

被引：28

作者：

Maile, E ^{[1
]}

Fischer, RA ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem Organomet & Mat 2, D-44870 Bochum, Germany

来源：

CHEMICAL VAPOR DEPOSITION | 2005年 / 11卷 / 10期

关键词：

MOCVD; thin films; zinc nitride;

D O I：

10.1002/cvde.200506383

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of cubic zinc nitride, Zn3N2, were obtained by metal-organic (MO)CVD at substrate temperatures between 275 degrees C and 410 degrees C. Bis [bis(trimethylsilyl)amido] zinc was used as source for Zn and ammonia as the N source. The films were deposited on SiO2/Si(100) and on zinc oxide-coated sapphire (c-plane Al2O3). Polycrystalline films were obtained at a deposition temperature of 350 degrees C. Typical growth rates were 600 nm h(-1). The influence of the temperature and the flow rate of the reactive gas on the film morphology were studied.

引用

页码：409 / 414

页数：6

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