Transport and thermoelectric performance of n-type PbTe films

被引:28
|
作者
Dzundza, B. [1 ]
Nykyruy, L. [1 ]
Parashchuk, T. [2 ]
Ivakin, E. [3 ]
Yavorsky, Y. [1 ]
Chernyak, L. [4 ]
Dashevsky, Z. [5 ]
机构
[1] Vasyl Stefanyk Precarpathian Natl Univ, Ivano Frankivsk, Ukraine
[2] Lukasiewicz Res Network, Krakow, Poland
[3] Belarusian State Univ, Minsk, BELARUS
[4] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[5] Ben Gurion Univ Negev, Dept Mat Engn, Beer Sheva, Israel
关键词
Thin films; Lead telluride; Thermoelectrical properties;
D O I
10.1016/j.physb.2020.412178
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the present work, a systematic study of structural, transport, and thermoelectric properties of n-PbTe films on a mica substrate has been carried out. A wide range of film samples with hole concentration from n = 8 x 10(16) cm 3 to n = 3 x10(18) cm(-3) were obtained by variation of composition of the stoichiometric PbTe and by additional doping with donor iodine impurity. Based on measurements obtained by the four coefficients method, the direct estimation of the density of states effective mass and the scattering mechanism of the investigated n-PbTe films has been carried out. The high thermoelectric figure of merit Z approximate to 1.3 x 10(-3) K-1 at T = 300 K has been obtained. Such a high thermoelectric figure of merit Z for n-PbTe films opens a possibility for the fabrication of the Film Thermoelectric Modules (FTEM), which could be a candidate for application at micro-scale thermoelectric converters.
引用
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页数:8
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