P-Type Metal Oxide Doped SnO2 Thin Films for H2S Detection

被引：5

作者：

Zhou, Dongxiang ^{[1
]}

Gan, Lu ^{[1
]}

Gong, Shuping ^{[1
]}

Fu, Qiuyun ^{[1
]}

Liu, Huan ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Minist Educ, Engn Res Ctr Funct Ceram, Wuhan 430074, Peoples R China

来源：

SENSOR LETTERS | 2011年 / 9卷 / 02期

关键词：

Tin Oxide; P-type Metal Oxide Doped; Hydrogen Sulfide; Gas Sensor; Thin Film; SENSING PERFORMANCE; SENSOR; CU;

D O I：

10.1166/sl.2011.1583

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, pure SnO2 thin film and three kinds of p-type metal oxide (CuO, NiO and Bi2O3) doped SnO2 gas sensing thin films have been prepared on alumina substrates with printed Ag interdigital electrodes by dip-coating method. X-ray diffraction and scanning electron microscopy were taken to study the micro characteristics of thin film samples. The gas testing results showed that, for pure SnO2 thin film working at optimal operating temperature (100 degrees C), the sensitivity was only 80 to 68.5 ppm H2S gas, but for CuO, NiO and Bi2O3 doped SnO2 thin films, the sensitivities were 438, 417 and 915, respectively, even at low temperature as 50 degrees C. And all the doped SnO2 thin film samples had recoverability at 50 degrees C. This result showed that one of the effective approaches to prepare low cost, low temperature and high sensitive H2S gas sensor was using p-type metal oxide doped SnO2 thin films.

引用

页码：651 / 654

页数：4

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