Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K

被引：153
作者：
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
机构：
[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 20期
关键词：
D O I：
10.1063/1.116830
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Continuous-wave (cw) operation of InGaN multiquantum-well-structure laser diodes (LDs) was demonstrated at 233 K. The threshold current and voltage of the LD were 210 mA and 11 V, respectively. During room-temperature cw operation, the LDs were easily broken within one second due to heat generation. At 233 K, the lifetime of the LDs was longer than 30 min, and the emission spectra could be measured under cw operation. Only a single peak was observed under cw operation with increasing forward current above the threshold current. The characteristic temperature of the threshold current of the LDs was 162 K. (C) 1996 American Institute of Physics.
引用
收藏
页码：3034 / 3036
页数：3
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