Electron accumulation in graphene by interaction with optically excited quantum dots

被引：27

作者：

Klekachev, A. V. ^{[1
,2
]}

Cantoro, M. ^{[1
,2
]}

van der Veen, M. H. ^{[1
]}

Stesmans, A. L. ^{[2
]}

Heyns, M. M. ^{[1
,3
]}

De Gendt, S. ^{[1
,4
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2011年 / 43卷 / 05期

关键词：

MOLECULES;

D O I：

10.1016/j.physe.2010.12.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zero-dimensional semiconductor nanocrystals (quantum dots) are known to interact with other metallic or semiconductor medium by means of resonant energy transfer or transfer of electronic charge. In the present work we demonstrate efficient electronic interaction of quantum dots and recently discovered graphene, single atom thick two-dimensional carbon crystal. Transfer of optically generated carriers from a quantum dot to graphene is seen by the quench of quantum dots photoluminescence and confirmed by the electrical measurements on single-layer graphene transistor. The phenomenon reported could find an application in graphene-based optical switching and light harvesting. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1046 / 1049

页数：4

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