MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

被引：12

作者：

Cha, Ming-Yang ^{[1
]}

Liu, Hao ^{[1
]}

Wang, Tian-Yu ^{[1
]}

Chen, Lin ^{[1
]}

Zhu, Hao ^{[1
]}

Ji, Li ^{[1
]}

Sun, Qing-Qing ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

AIP ADVANCES | 2020年 / 10卷 / 06期

关键词：

NANOSHEETS; PFETS;

D O I：

10.1063/5.0010829

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications. In this study, we fabricated Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors and back-gate field-effect transistors (FETs) with few-layered molybdenum disulfide (MoS2) nanosheets as the channel and a ferroelectric Hf0.5Zr0.5O2 film as the gate dielectric. Good dielectric and ferroelectric properties have been observed from the HZO film fabricated with atomic layer deposition-based techniques. The MoS2-HZO ferroelectric FETs (FeFETs) have exhibited excellent performance including ferroelectric polarization switching with a high on/off ratio and negligible degradation in endurance and retention properties. Our results shown here suggest that MoS2-HZO FeFETs can be a promising alternative for next-generation nonvolatile memories.

引用

页数：6

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