Shallow Si donor in ion-implanted homoepitaxial AlN

被引：31

作者：

Breckenridge, M. Hayden ^{[1
]}

Guo, Qiang ^{[1
]}

Klump, Andrew ^{[1
]}

Sarkar, Biplab ^{[1
]}

Guan, Yan ^{[1
]}

Tweedie, James ^{[2
]}

Kirste, Ronny ^{[2
]}

Mita, Seiji ^{[2
]}

Reddy, Pramod ^{[2
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, 2054 Kildaire Farm Rd, Cary, NC 27518 USA

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 17期

关键词：

THREADING DISLOCATION DENSITIES; SEEDED GROWTH; QUALITY ALN; CRYSTALS; DEPENDENCE; SILICON; ALGAN;

D O I：

10.1063/1.5144080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate Si as a shallow donor in aluminum nitride (AlN) with an ionization energy of similar to 70meV. The shallow state was achieved by ion implantation of Si into homoepitaxial AlN and a low thermal budget damage recovery and activation process. These results demonstrate that the DX formation may be a kinetically limited process, though being a non-equilibrium process, preventing the Si donor from relaxing to the deep donor state. The room temperature conductivity was measured to be similar to 0.05 Omega (-1) cm(-1), which is one order of magnitude higher than what has been reported for the epitaxially doped or implanted AlN.

引用

页数：5

共 40 条

[1] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films [J].

Angerer, H ;

Brunner, D ;

Freudenberg, F ;

Ambacher, O ;

Stutzmann, M ;

Hopler, R ;

Metzger, T ;

Born, E ;

Dollinger, G ;

Bergmaier, A ;

Karsch, S ;

Korner, HJ .

APPLIED PHYSICS LETTERS, 1997, 71 (11) :1504-1506

[2]

[Anonymous], 2013, J AM COLL CARDIOL, V61, pe78, DOI [10.1016/j.jacc.2012.11.019, DOI 10.1103/PHYSREVB.61.R16283]

[3]

[Anonymous], DIABETES CARE S1

[4] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].

AYERS, JE .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :71-77

[5] Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification [J].

Bai, J ;

Dudley, M ;

Sun, WH ;

Wang, HM ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[6] Si-doped AlxGa1-xN(0.56≤ x ≤1) layers grown by molecular beam epitaxy with ammonia -: art. no. 132106 [J].

Borisov, B ;

Kuryatkov, V ;

Kudryavtsev, Y ;

Asomoza, R ;

Nikishin, S ;

Song, DY ;

Holtz, M ;

Temkin, H .

APPLIED PHYSICS LETTERS, 2005, 87 (13) :1-3

[7] Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition [J].

Bryan, I. ;

Rice, A. ;

Hussey, L. ;

Bryan, Z. ;

Bobea, M. ;

Mita, S. ;

Xie, J. ;

Kirste, R. ;

Collazo, R. ;

Sitar, Z. .

APPLIED PHYSICS LETTERS, 2013, 102 (06)

[8] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD [J].

Bryan, Isaac ;

Bryan, Zachary ;

Washiyama, Shun ;

Reddy, Pramod ;

Gaddy, Benjamin ;

Sarkar, Biplab ;

Breckenridge, M. Hayden ;

Guo, Qiang ;

Bobea, Milena ;

Tweedie, James ;

Mita, Seiji ;

Irving, Douglas ;

Collazo, Ramon ;

Sitar, Zlatko .

APPLIED PHYSICS LETTERS, 2018, 112 (06)

[9] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy [J].

Chichibu, S. F. ;

Miyake, H. ;

Ishikawa, Y. ;

Tashiro, M. ;

Ohtomo, T. ;

Furusawa, K. ;

Hazu, K. ;

Hiramatsu, K. ;

Uedono, A. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (21)

[10] Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications [J].

Collazo, Ramon ;

Mita, Seiji ;

Xie, Jinqiao ;

Rice, Anthony ;

Tweedie, James ;

Dalmau, Rafael ;

Sitar, Zlatko .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2031-2033

← 1 2 3 4 →