A 56-Gb/s Optical Receiver With 2.08-μA Noise Monolithically Integrated into a 250-nm SiGe BiCMOS Technology

被引:11
作者
Dziallas, Giannino [1 ]
Fatemi, Adel [1 ]
Peczek, Anna [2 ]
Zimmermann, Lars [1 ,3 ]
Malignaggi, Andrea [1 ]
Kahmen, Gerhard [1 ,4 ]
机构
[1] Leibniz Inst High Performance Microelect, D-15236 Frankfurt, Germany
[2] IHP Solut GmbH, D-15236 Frankfurt, Germany
[3] Berlin Inst Technol, Inst High Frequency & Semicond Syst Technol, D-10623 Berlin, Germany
[4] Brandenburg Tech Univ Cottbus, Inst Elect Engn & Informat Sci, D-03046 Cottbus, Germany
关键词
Optical receivers; Resistors; Silicon germanium; BiCMOS integrated circuits; Capacitance; Thermal resistance; Thermal noise; Broadband amplifiers; low noise amplifiers; optical receiver; SiGe BiCMOS; silicon photonics; transimpedance amplifiers (TIAs); TRANSIMPEDANCE AMPLIFIER; GB/S;
D O I
10.1109/TMTT.2021.3104838
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, a monolithically integrated single-polarization optical receiver with automatic gain control is presented that shows state-of-the-art performance in terms of bandwidth (BW) and noise. A low-noise technique is applied in a monolithically integrated optical receiver featuring automatic gain and dc-offset cancellation control loops. The electronic and photonic components are fabricated on the same silicon substrate using IHP's 0.25-mu m SiGe BiCMOS EPIC technology. The optical receiver features a high tunable transimpedance gain of 66 dB omega at a large optoelectrical BW of 34 GHz and an input-referred noise current of 2.08 mu A $_{rms}$ while consuming only 205 mW of power.
引用
收藏
页码:392 / 401
页数:10
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