Sulphur passivation of dry-etched AlGaAs laser facets

被引：10

作者：

Collot, P ^{[1
]}

Delalande, S ^{[1
]}

Olivier, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 06期

关键词：

D O I：

10.1049/el:19990326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects ars reported of sulphur treatment in Na2S and (NH4)(2)S solutions for the passivation of AlGaAs laser facets, etched using Cl-2-based chemically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% average improvement in the catastrophic optical mirror damage threshold is measured on sulphur-treated broad-area CAIBE lasers.

引用

收藏

页码：506 / 508

页数：3

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