Deposition of tetracene thin films on SiO2/Si substrates by rapid expansion of supercritical solutions using carbon dioxide

被引：1

作者：

Fujii, Tatsuya ^{[1
]}

Takahashi, Yuta ^{[1
]}

Uchida, Hirohisa ^{[1
]}

机构：

[1] Shinshu Univ, Fac Engn, Dept Chem & Mat Engn, Nagano 3808553, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; POLYMER-COATINGS; MOBILITY; MORPHOLOGY; SURFACES; GROWTH;

D O I：

10.7567/APEX.8.035504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a novel deposition technique of tetracene (naphthacene) thin films on SiO2/Si substrates by rapid expansion of supercritical solutions (RESS) using CO2. Optical microscopy and scanning electron microscopy show that the thin films consist of a high density of submicron-sized grains. The growth mode of the grains followed the Volmer-Weber mode. X-ray diffraction shows that the thin films have regularly arranged structures in both the horizontal and vertical directions of the substrate. A fabricated top-contacted organic thin-film transistor with the tetracene active layer showed p-type transistor characteristics with a field-effect mobility of 5.1 x 10(-4)cm(2)V(-1) s(-1). (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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