Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning

被引：29

作者：

Cho, YongJin ^{[1
]}

Chang, Celesta ^{[2
,3
]}

Lee, Kevin ^{[1
]}

Gong, Mingli ^{[4
]}

Nomoto, Kazuki ^{[1
]}

Toita, Masato ^{[5
]}

Schowalter, Leo J. ^{[5
]}

Muller, David A. ^{[3
,6
]}

Jena, Debdeep ^{[1
,4
,6
]}

Xing, Huili Grace ^{[1
,4
,6
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[5] Crystal IS, Green Isl, NY 12183 USA

[6] Cornell Univ, Kavli Inst Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 17期

关键词：

DESORPTION; EPITAXY; GROWTH; OXIDE;

D O I：

10.1063/1.5143968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the effectiveness of in situ thermal cleaning with that of Al-assisted cleaning of native surface oxides of bulk AlN for homoepitaxial growth by molecular beam epitaxy. Thermal deoxidation performed at 1450 degrees C in vacuum results in voids in the AlN substrate. On the other hand, Al-assisted deoxidation at approximate to 900 degrees C results in high-quality AlN homoepitaxy, evidenced by clean and wide atomic terraces on the surface and no extended defects at the growth interface. This study shows that Al-assisted in situ deoxidation is effective in removing native oxides on AlN, providing a clean surface to enable homoepitaxial growth of AlN and its heterostructures; furthermore, it is more attractive over thermal deoxidation, which needs to be conducted at much higher temperatures due to the strong bonding strength of native oxides on AlN.

引用

页数：5

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