Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser

被引：27

作者：

Ruhnke, N. ^{[1
]}

Mueller, A. ^{[1
]}

Eppich, B. ^{[1
]}

Guether, R. ^{[1
]}

Maiwald, M. ^{[1
]}

Sumpf, B. ^{[1
]}

Erbert, G. ^{[1
]}

Traenkle, G. ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech Berlin, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

OPTICS LETTERS | 2015年 / 40卷 / 09期

关键词：

NARROW-BAND; ABSORPTION-SPECTROSCOPY; SEMICONDUCTOR-LASER; LIGHT-SOURCE; BLUE;

D O I：

10.1364/OL.40.002127

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a beta-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 mu W in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range. (C) 2015 Optical Society of America

引用

页码：2127 / 2129

页数：3

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