Anomalous polarization pattern evolution of Raman modes in few-layer ReS2 by angle-resolved polarized Raman spectroscopy

被引:14
作者
Wu, Ruowei [1 ]
Qi, Mei [2 ]
Zhao, Qiyi [3 ]
Huang, Yuanyuan [1 ]
Zhou, Yixuan [1 ]
Xu, Xinlong [1 ]
机构
[1] Northwest Univ, Int Collaborat Ctr Photoelect Technol & Nano Func, Inst Photon & Photon Technol, Shaanxi Joint Lab Graphene,State Key Lab Photon T, Xian 710069, Peoples R China
[2] Northwest Univ, Sch Informat Sci & Technol, Xian 710127, Peoples R China
[3] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China
基金
中国国家自然科学基金;
关键词
INPLANE ANISOTROPIES; BLACK PHOSPHORUS; MX2; M; MONOLAYER; SCATTERING; DEPENDENCE; TRANSITION; TC;
D O I
10.1039/d1nr06733h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low-symmetry of ReS2 has not only in-plane but also out-of-plane anisotropic light scattering, which is complicated, yet interesting with intrinsic strong electron-phonon coupling. In such a case, the Raman tensor also gets sophisticated with nine non-zero elements, which is layer-dependent for different Raman modes. Herein, we systematically investigated the polarization pattern evolution of both in-plane and out-of-plane Raman modes of few-layer ReS2 by angle-resolved polarized Raman spectroscopy. We found that in-plane Raman modes with less layer-dependence could be used to determine the crystal orientation (Re-chain direction) due to the weak electron-phonon interaction between layers. However, the out-of-plane and mixed vibration Raman modes demonstrate much evident layer-dependence due to the obvious electron-phonon interaction between layers. As such, the polarization patterns for the out-of-plane vibration Raman modes are distorted with layers in not only petal types but also maximum Raman intensity directions. This distortion is mainly due to the phase difference between Raman elements, which are complex values due to the near bandgap excitation laser. The results reveal that deep insights into anisotropy in low-symmetry two-dimensional materials could afford not only rich physics but also potential polarized optoelectronic devices.
引用
收藏
页码:1896 / 1905
页数:10
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