IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

被引：18

作者：

Geobaldo, F

Onida, B

Rivolo, P

Borini, S

Boarino, L

Rossi, A

Amato, G

Garrone, E

机构：

[1] Politecn Torino, Dipartimento Sci Mat & Ingn Chim, I-10129 Turin, Italy

[2] Ist Elettrotecnico Nazl Galileo Ferraris, ThinFlimLab, I-10135 Turin, Italy

[3] Politecn Torino, INFM, I-10129 Turin, Italy

来源：

CHEMICAL COMMUNICATIONS | 2001年 / 21期

关键词：

D O I：

10.1039/b106188g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mesoporous silicon doped with 3.0 x 10(19) B atoms cm(-3) (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.

引用

页码：2196 / 2197

页数：2

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