Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

被引：1

作者：

Choi, RJ ^{[1
]}

Lee, BK ^{[1
]}

Shim, HW ^{[1
]}

Kang, DS ^{[1
]}

Suh, EK ^{[1
]}

Hong, CH ^{[1
]}

Lee, HJ ^{[1
]}

Hahn, YB ^{[1
]}

Cho, HK ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303553

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23% In and the interface showed the best abruptness, but the lowest intensity at 30% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2703 / 2706

页数：4

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