Gettering improvements of minority-carrier lifetimes in solar grade silicon

被引：19

作者：

Osinniy, V. ^{[1
,3
]}

Larsen, A. Nylandsted ^{[1
]}

Dahl, E. Hvidsten ^{[1
,2
]}

Enebakk, E. ^{[2
]}

Soiland, A. -K. ^{[2
]}

Tronstad, R. ^{[2
]}

Safir, Y. ^{[3
]}

机构：

[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

[2] Elkem Solar A S, N-4675 Kristiansand, Norway

[3] RAcell Solar A S, DK-1820 Frederiksberg C, Denmark

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 101卷

关键词：

Solar grade silicon; Minority-carrier lifetime; Internal gettering; Phosphorus gettering; Release/diffusion model; Segregation model; MULTICRYSTALLINE SILICON; CELLS; BORON; SI;

D O I：

10.1016/j.solmat.2012.02.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each group, increasing in certain cases the lifetime from 3 up to 81 mu s. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：123 / 130

页数：8

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