Fabrication of mesoporous functionalized arrays by integrating deep X-ray lithography with dip-pen writing

被引：41

作者：

Falcaro, Paolo ^{[2
]}

Costacurta, Stefano ^{[1
]}

Malfatti, Luca ^{[1
]}

Takahashi, Masahide ^{[1
,3
]}

Kidchob, Tongjit ^{[1
]}

Casula, Maria Francesca ^{[4
]}

Piccinini, Massimo ^{[5
]}

Marcelli, Augusto ^{[5
]}

Marmiroli, Benedetta ^{[6
]}

Amenitsch, Heinz ^{[6
]}

Schiavuta, Piero ^{[2
]}

Innocenzi, Plinio ^{[1
]}

机构：

[1] Univ Sassari, Lab Sci Mat & Nanotecnol, I-07041 Alghero, SS, Italy

[2] Nano Fabricat Facil, Assoc CIVEN, I-30175 Marghera, VE, Italy

[3] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

[4] Univ Cagliari, Dipartimento Sci Chim, I-09042 Monserrato, CA, Italy

[5] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy

[6] Austrian Acad Sci, Inst Biophys & Nanosyst Struct Res, A-8042 Graz, Austria

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 10期

关键词：

D O I：

10.1002/adma.200702795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Deep X-ray lithography (DXRL) allows the highly controlled patterning of mesoporous films (see figure). This technique requires no resist, enabling direct patterning without causing mesostructure degradation. Increase of silica polycondensation and partial removal of the templating agent is induced by synchrotron radiation. Selective functionalization of the mesoporous objects is achieved by combining DXRL with dip-pen writing.

引用

页码：1864 / +

页数：7

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