Phase transformation of single crystal β-tungsten nanorods at elevated temperatures

被引:45
作者
Karabacak, T [1 ]
Wang, PI [1 ]
Wang, GC [1 ]
Lu, TM [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
tungsten; beta-tungsten; A15; phase transformation; oblique angle deposition; glancing angle deposition; nanorods; nanocolumns;
D O I
10.1016/j.tsf.2005.06.059
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the phase transformation of single crystal beta-phase W(100) nanorods that occurs at an elevated temperature of similar to 950 degrees C. The beta-W nanorods oriented perpendicular to the flat silicon substrate were grown by an oblique angle sputter deposition technique with substrate rotation. The nanorods typically have an average length of similar to 450 rim and an average width of similar to 75 run. The phase transformation was investigated by X-ray diffraction measurements of the nanorods vacuum-annealed at various temperatures in the range 700-1000 degrees C for 30 min at each annealing temperature. As deposited individual nanorods are found to be single crystal, as evidenced from the analysis of transmission electron microscopy diffraction patterns. Our single crystal beta-phase W(100) nanorods phase transformation temperature is higher than that of the polyerystalline simple-cubic beta-hase (A15) W films. Depending on the deposition conditions, W films generally transform to thermodynamically stable bcc alpha-phase at temperatures ranging from room-temperature to similar to 650 degrees C. The transformation is accompanied with the removal of oxygen atoms from the p-matrix. However, our results of W rods suggest that the removal of oxygen atoms from the single crystal W nanorods is more difficult due to the absence of grain boundaries that leads to the requirement of higher annealing temperatures for the phase transformation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:293 / 296
页数:4
相关论文
共 17 条
  • [11] MICROSTRUCTURE, GROWTH, RESISTIVITY, AND STRESSES IN THIN TUNGSTEN FILMS DEPOSITED BY RF SPUTTERING
    PETROFF, P
    SHENG, TT
    SINHA, AK
    ROZGONYI, GA
    ALEXANDER, FB
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2545 - 2554
  • [12] Phase transformation of thin sputter-deposited tungsten films at room temperature
    Rossnagel, SM
    Noyan, IC
    Cabral, C
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2047 - 2051
  • [13] Influences of oxygen on the formation and stability of A15 β-W thin films
    Shen, YG
    Mai, YW
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 284 (1-2): : 176 - 183
  • [14] Field ionization of argon using β-phase W nanorods
    Singh, JP
    Karabacak, T
    Lu, TM
    Wang, GC
    Koratkar, N
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3226 - 3228
  • [15] Enhanced cold field emission from 100 oriented β-W nanoemitters
    Singh, JP
    Tang, F
    Karabacak, T
    Lu, TM
    Wang, GC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1048 - 1051
  • [16] TUNGSTEN METALLIZATION FOR LSI APPLICATIONS
    WAGNER, RS
    SINHA, AK
    SHENG, TT
    LEVINSTEIN, HJ
    ALEXANDER, FB
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (03): : 582 - 590
  • [17] STRUCTURE AND STABILITY OF SPUTTER-DEPOSITED BETA-TUNGSTEN THIN-FILMS
    WEERASEKERA, IA
    SHAH, SI
    BAXTER, DV
    UNRUH, KM
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (24) : 3231 - 3233