Temperature-dependent Hall study on p-type GaN epilayers grown by metal-organic chemical vapor deposition

被引：0

作者：

Wang, W ^{[1
]}

Liu, W ^{[1
]}

Hao, MS ^{[1
]}

Chua, SJ ^{[1
]}

Liu, R ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

Hall Measurement; GaN; MOCVD; p-type doping; hole mobility; scattering factors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature-dependent Hall measurements were performed on p-type GaN epilayers grown on (0001) sapphire substrates by metal-organic chemical vapor deposition in the temperature range of 100 K to 500 K. The resistivity, hole concentration and hole mobility were monitored as a function of temperature. By analyzing the temperature dependence of these electrical properties, the activation energies of 156 meV and 149 meV were obtained for the relatively low p-conductive samples and highly p-conductive samples, respectively. Also conduction mechanisms were found to be free carrier conductions contributed from Mg acceptors for relatively low p-conductive samples (p=3x 10(17)cm(-3) at room temperature) at all temperatures and for highly p-conductive samples (p=1.2x10(18)cm(-3) at room temperature) at high temperature. At low temperature, impurity-band conduction must also be involved when doping concentration is high. Finally scattering factors limiting hole mobility were discerned at different temperatures.

引用

页码：736 / 739

页数：4

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