Temperature-dependent Hall study on p-type GaN epilayers grown by metal-organic chemical vapor deposition

被引：0

作者：

Wang, W ^{[1
]}

Liu, W ^{[1
]}

Hao, MS ^{[1
]}

Chua, SJ ^{[1
]}

Liu, R ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

Hall Measurement; GaN; MOCVD; p-type doping; hole mobility; scattering factors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature-dependent Hall measurements were performed on p-type GaN epilayers grown on (0001) sapphire substrates by metal-organic chemical vapor deposition in the temperature range of 100 K to 500 K. The resistivity, hole concentration and hole mobility were monitored as a function of temperature. By analyzing the temperature dependence of these electrical properties, the activation energies of 156 meV and 149 meV were obtained for the relatively low p-conductive samples and highly p-conductive samples, respectively. Also conduction mechanisms were found to be free carrier conductions contributed from Mg acceptors for relatively low p-conductive samples (p=3x 10(17)cm(-3) at room temperature) at all temperatures and for highly p-conductive samples (p=1.2x10(18)cm(-3) at room temperature) at high temperature. At low temperature, impurity-band conduction must also be involved when doping concentration is high. Finally scattering factors limiting hole mobility were discerned at different temperatures.

引用

收藏

页码：736 / 739

页数：4

相关论文

共 50 条

[31] Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition [J].

Nakada, N ;

Mori, M ;

Ishikawa, H ;

Egawa, T ;

Jimbo, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (5A) :2573-2577

[32] Optical properties of novel GaN 3D structures grown by metal-organic chemical vapor deposition (MOCVD) [J].

Sacilotti, M ;

Imhoff, L ;

Dumas, C ;

Viste, P ;

Vial, JC ;

Baldeck, P ;

Colombier, I ;

Donatini, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6A) :L698-L701

[33] As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN [J].

Chen, Shang ;

Honda, Unhi ;

Shibata, Tatsunari ;

Matsumura, Toshiya ;

Tokuda, Yutaka ;

Ishikawa, Kenji ;

Hori, Masaru ;

Ueda, Hiroyuki ;

Uesugi, Tsutomu ;

Kachi, Tetsu .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)

[34] Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition [J].

Ohshima, T ;

Moriguchi, H ;

Shigemasa, R ;

Goto, S ;

Tsunotani, M ;

Kimura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B) :1161-1163

[35] Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition [J].

Al Tahtamouni, Talal Mohammed ;

Du, Xiaozhang ;

Lin, Jingyu ;

Jiang, Hongxing .

OPTICAL MATERIALS EXPRESS, 2015, 5 (03) :648-654

[36] Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition [J].

Li, Zhong ;

Salfi, Joseph ;

De Souza, Christina ;

Sun, Ping ;

Nair, Selvakumar V. ;

Ruda, Harry E. .

APPLIED PHYSICS LETTERS, 2010, 97 (06)

[37] The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition [J].

Azman, Adreen ;

Kamarundzaman, Anas ;

Abu Bakar, Ahmad Shuhaimi ;

Abd Majid, Wan Haliza .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 131 (131)

[38] High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition [J].

Wang, Jiaming ;

Xu, Fujun ;

He, Chenguang ;

Zhang, Lisheng ;

Lu, Lin ;

Wang, Xinqiang ;

Qin, Zhixin ;

Shen, Bo .

SCIENTIFIC REPORTS, 2017, 7

[39] Field dependent transformation of electron traps in GaN p-n diodes grown by metal-organic chemical vapour deposition [J].

Asghar, M ;

Muret, P ;

Beaumont, B ;

Gibart, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 113 (03) :248-252

[40] Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition [J].

Bayram, C. ;

Pere-laperne, N. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

← 1 2 3 4 5 →