Temperature-dependent Hall study on p-type GaN epilayers grown by metal-organic chemical vapor deposition

被引：0

作者：

Wang, W ^{[1
]}

Liu, W ^{[1
]}

Hao, MS ^{[1
]}

Chua, SJ ^{[1
]}

Liu, R ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

Hall Measurement; GaN; MOCVD; p-type doping; hole mobility; scattering factors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature-dependent Hall measurements were performed on p-type GaN epilayers grown on (0001) sapphire substrates by metal-organic chemical vapor deposition in the temperature range of 100 K to 500 K. The resistivity, hole concentration and hole mobility were monitored as a function of temperature. By analyzing the temperature dependence of these electrical properties, the activation energies of 156 meV and 149 meV were obtained for the relatively low p-conductive samples and highly p-conductive samples, respectively. Also conduction mechanisms were found to be free carrier conductions contributed from Mg acceptors for relatively low p-conductive samples (p=3x 10(17)cm(-3) at room temperature) at all temperatures and for highly p-conductive samples (p=1.2x10(18)cm(-3) at room temperature) at high temperature. At low temperature, impurity-band conduction must also be involved when doping concentration is high. Finally scattering factors limiting hole mobility were discerned at different temperatures.

引用

页码：736 / 739

页数：4

共 50 条

[1] Beryllium Doped p-type GaN Grown by Metal-Organic Chemical Vapor Deposition
Al Tahtamouni, T. M.
Sedhain, A.
Lin, J. Y.
Jiang, H. X.
JORDAN JOURNAL OF PHYSICS, 2010, 3 (02): : 77 - 81
[2] Electron transport properties of GaN epilayers grown by metal-organic chemical vapor deposition
Cheong, MG
Kim, KS
Lee, KJ
Yang, GM
Lim, KY
Hong, CH
Suh, EK
Lee, HJ
Yoshikawa, A
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S244 - S252
[3] Indium doping effects on GaN epilayers grown by metal-organic chemical vapor deposition
Yoon, HS
Choi, RJ
Kim, CS
Hahn, YB
Hong, CH
Suh, EK
Lee, HJ
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S438 - S440
[4] Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork
Xie, Jinqiao
Chevtchenko, Serguei A.
Ozgur, Umit
Morkoc, Hadis
APPLIED PHYSICS LETTERS, 2007, 90 (26)
[5] Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition
Hung, S. C.
Huang, P. J.
Chan, C. E.
Uen, W. Y.
Ren, F.
Pearton, S. J.
Yang, T. N.
Chiang, C. C.
Lan, S. M.
Chi, G. C.
APPLIED SURFACE SCIENCE, 2008, 255 (05) : 3016 - 3018
[6] Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition
Kim, Dong Chan
Han, Won Suk
Kong, Bo Hyun
Cho, Hyung Koun
Hong, Chang Hee
PHYSICA B-CONDENSED MATTER, 2007, 401 (386-390) : 386 - 390
[7] Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition
Zavada, J. M.
Nepal, N.
Ugolini, C.
Lin, J. Y.
Jiang, H. X.
Davies, R.
Hite, J.
Abernathy, C. R.
Pearton, S. J.
Brown, E. E.
Hoemmerich, U.
APPLIED PHYSICS LETTERS, 2007, 91 (05)
[8] Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition
Park, Young S.
Kwon, Y. H.
Im, Hyunsik
Jung, Woong
Kim, Hyungsang
Kim, Minseon
Yang, W. C.
Lee, Junho
Choi, Hong Goo
Roh, Cheong Hyun
Hahn, Cheol-Koo
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (04) : 1172 - 1175
[9] Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition
Jang, J. H.
Herrero, A. M.
Gila, B.
Abernathy, C.
Craciun, V.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[10] Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition
Jang, J.H.
Herrero, A.M.
Gila, B.
Abernathy, C.
Craciun, V.
Journal of Applied Physics, 2008, 103 (06):

← 1 2 3 4 5 →