Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates

被引：4
作者：
GonzalezBorrero, PP
Marega, E
Lubyshev, DI
Petitprez, E
Basmaji, P
机构：
[1] Inst. de Fisica de Sao Carlos, Universidade de São Paulo, 13960-970 São Carlos, SP
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 01期
基金：
巴西圣保罗研究基金会;
关键词：
quantum dots; self-assembled; InAs; high-index; MBE;
D O I：
10.1006/spmi.1996.0370
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also presented. The PL spectra reveal interesting differences in amplitude, integral luminescence, peak position and peak shape. The PL temperature dependence indicates an additional lateral confinement on(100), (n11)B, (211)A and (111)A surfaces. Our results also show an enhancement of the QD onset thermal quenching energy by a factor of similar to 3 for these orientations. In contrast, the structures grown on (711)A and (511)A surfaces do not exhibit QD formation. (C) 1997 Academic Press Limited.
引用
收藏
页码：85 / 89
页数：5
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