Dimensional Crossover-Induced Topological Hall Effect in a Magnetic Topological Insulator

被引:107
作者
Liu, Chang [1 ]
Zang, Yunyi [1 ]
Ruan, Wei [1 ]
Gong, Yan [1 ]
He, Ke [1 ,2 ]
Ma, Xucun [1 ,2 ]
Xue, Qi-Kun [1 ,2 ]
Wang, Yayu [1 ,2 ]
机构
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
DOMAIN-WALL; THIN-FILMS; SKYRMIONS; FERROMAGNETISM; STATE; ORDER; LIMIT;
D O I
10.1103/PhysRevLett.119.176809
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with an accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than five quintuple layers (QLs) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to four QLs, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to three QLs. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic Skyrmion structure that is responsible for the THE.
引用
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页数:5
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