Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO

被引：13

作者：

Brueck, S. ^{[1
,2
,3
,4
]}

Paul, M. ^{[3
,4
]}

Tian, H. ^{[5
]}

Mueller, A. ^{[3
,4
]}

Kufer, D. ^{[3
,4
]}

Praetorius, C. ^{[3
,4
]}

Fauth, K. ^{[3
,4
]}

Audehm, P. ^{[6
]}

Goering, E. ^{[6
]}

Verbeeck, J. ^{[5
]}

Van Tendeloo, G. ^{[5
]}

Sing, M. ^{[3
,4
]}

Claessen, R. ^{[3
,4
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Australian Nucl Sci & Technol Org, Menai, NSW 2232, Australia

[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[4] Univ Wurzburg, Roentgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[5] Univ Antwerp, B-2020 Antwerp, Belgium

[6] Max Planck Inst Intelligent Syst former Met Res, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期

基金：

欧洲研究理事会;

关键词：

ORBITAL MOMENTS;

D O I：

10.1063/1.3687731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe3O4 contains only Fe3+ ions. Besides this narrow 2.5 angstrom interface layer, Fe3O4 shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687731]

引用

页数：4

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