A Doherty Power Amplifier With Extended High-Efficiency Range Using Three-Port Harmonic Injection Network

被引:31
|
作者
Zhou, Xinyu [1 ]
Chan, Wing Shing [2 ]
Sharma, Tushar [3 ]
Xia, Jing [4 ]
Chen, Shichang [5 ]
Feng, Wenjie [6 ,7 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[3] Univ Calgary, Dept Elect Engn, Calgary, AB T2N 1N4, Canada
[4] Jiangsu Univ, Sch Comp Sci & Commun Engn, Zhenjiang 212004, Jiangsu, Peoples R China
[5] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Zhejiang, Peoples R China
[6] South China Univ Technol, Guangdong Prov Key Lab Millimeter Wave & Terahert, Guangzhou 510006, Peoples R China
[7] Nanjing Univ Sci & Technol, Dept Commun Engn, Nanjing 210094, Peoples R China
基金
美国国家科学基金会;
关键词
Harmonic analysis; Impedance; Power system harmonics; Geometry; Shunts (electrical); Inductors; Wireless communication; Doherty power amplifier; GaN-based FETs; high efficiency range; high efficiency amplifier; harmonic injection; WIDE BANDWIDTH; DESIGN;
D O I
10.1109/TCSI.2022.3160382
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a Doherty power amplifier (DPA) using a novel three-port harmonic injection network (HIN) to extend its high-efficiency range is proposed. With the help of a part of the three-port HIN, which is placed between the carrier and peaking branches, the optimal drain fundamental frequency termination for the carrier device at back-off and saturation can be realized simultaneously thus enhancing the efficiency at back-off significantly. Meanwhile, this three-port HIN can also realize second harmonic drain terminations for the carrier and peaking device with the quasi-open and quasi-short circuit at the current plane, respectively. Consequently, the saturated power ratio between peaking and carrier devices is increased, which further extends the back-off range of the asymmetric drain-biased DPA. For demonstration purposes, an extended high efficiency range DPA was designed and fabricated using commercially available GaN HEMT (Cree CGH 40010F) devices. Measured results for this novel idea gave drain efficiencies better than 62.5% at 9-9.5 dB back-off point from 1.60 to 1.95 GHz.
引用
收藏
页码:2756 / 2766
页数:11
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