Superlattices of Bi2Se3/In2Se3: Growth characteristics and structural properties

被引：46

作者：

Wang, Z. Y. ^{[1
]}

Guo, X. ^{[1
]}

Li, H. D. ^{[1
,2
]}

Wong, T. L. ^{[3
]}

Wang, N. ^{[3
]}

Xie, M. H. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 02期

关键词：

SINGLE DIRAC CONE; PHASE-TRANSFORMATION; THIN-FILMS; SEMICONDUCTOR; SURFACE; EPITAXY; BI2SE3; BI2TE3; LIMIT;

D O I：

10.1063/1.3610971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610971]

引用

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