Structural, Electronic Structure, and Photovoltaic Studies of MgO/TiO2/ITO Heterostructures

被引:2
作者
Gaur, Deepika [1 ]
Sharma, Sunita [1 ]
Sharma, Aditya [2 ]
Sharma, Dhirendra Kumar [3 ]
Shukla, Sweta [3 ]
机构
[1] North Cap Univ, Dept Appl Sci, Gurugram 122017, Haryana, India
[2] Manav Rachna Univ, Dept Phys, Faridabad 121004, Haryana, India
[3] KIET Grp Inst, Dept Appl Sci, Ghaziabad 201206, Uttar Pradesh, India
关键词
MgO; interfacial layer; spin-coating; TiO2; fill factor; thin films; PEROVSKITE SOLAR-CELLS; PHOTOCATALYST APPLICATION; HIGHLY EFFICIENT; BLOCKING LAYER; METAL-OXIDE; MGO LAYER; TIO2; NANOPARTICLES; PERFORMANCE; DYNAMICS;
D O I
10.1007/s11664-021-09290-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study describes the mechanism of interfacial interaction of the MgO layer with TiO2 films and demonstrates the modification in optical and photovoltaic properties of MgO/TiO2/ITO heterostructures. X-ray diffraction, field emission scanning electron microscopy (FESEM), UV-visible spectroscopy, and x-ray absorption near-edge structure (XANES) at O K-edge, Mg K-edge, and Ti K-edge have been employed to characterize the MgO/TiO2/ITO heterostructures. The photovoltaic properties of heterostructures are studied using a solar simulator. FESEM results confirmed the spherical shape of MgO and TiO2 nanoparticles. Hybridization among the frontier orbitals of O, Mg, and Ti and the presence of Mg2+ and Ti4+ ions are confirmed by XANES studies. Assimilation of the MgO layer on TiO2 film resulted in a significant enhancement in the absorbance characteristics. The MgO film, deposited with maximum spin-coating speed 5000 rpm, exhibited the highest fill factor (FF=0.78), high short-circuit current (I-sc = 12.20 mA/cm(2)), and open-circuit voltage (V-oc = 0.93 V). The mechanism of high FF in MgO/TiO2/ITO structures has been discussed by considering the transparency and electron scavenging from the heterostructures.
引用
收藏
页码:314 / 320
页数:7
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